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| Inchange Semiconductor Product Specification Silicon NPN Power Transistors DESCRIPTION With TO-3PFa package High voltage ;high speed APPLICATIONS Converters Inverters Switching regulators Motor control systems PINNING (See Fig.2) PIN 1 2 3 Base Collector Emitter DESCRIPTION BUW11F BUW11AF Absolute maximum ratings(Ta=25ae ) SYMBOL VCBO PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current l BUW11F BUW11AF BUW11F VCEO VEBO IC ICM IB IBM PT Tj Tstg HAN INC BUW11AF SEM GE Open base Open emitter UTO OND IC CONDITIONS 850 1000 400 450 9 5 10 2 4 VALUE R UNIT V V V A A A A W ae ae Open collector Collector current-peak Base current Base current-peak Total power dissipation Junction temperature Storage temperature TC=25ae 41 150 -65~150 THERMAL CHARACTERISTICS SYMBOL Rth j-a PARAMETER Thermal resistance from junction to ambient MAX 35 UNIT K/W Inchange Semiconductor Product Specification Silicon NPN Power Transistors CHARACTERISTICS Tj=25ae unless otherwise specified PARAMETER BUW11F VCEO(SUS) Collector-emitter sustaining voltage BUW11AF BUW11F VCEsat Collector-emitter saturation voltage BUW11AF BUW11F VBEsat Base-emitter saturation voltage BUW11AF ICES IEBO hFE-1 hFE-2 Collector cut-off current IC=2.5A; IB=0.5A VCE=Rated VCES; VBE=0 Tj=125ae VEB=9V; IC=0 IC=5mA ; VCE=5V IC=0.5A ; VCE=5V IC=2.5A; IB=0.5A IC=3A; IB=0.6A IC=3A; IB=0.6A IC=0.1A ; IB=0; L=25mH CONDITIONS BUW11F BUW11AF SYMBOL MIN 400 TYP. MAX UNIT V 450 1.5 V 1.4 V 1.0 2.0 mA mA Emitter cut-off current DC current gain DC current gain Turn-on time Storage time Switching times resistive load ton ts tf HAN INC SEM GE UTO OND IC 10 10 R 35 35 10 1.0 For BUW11F IC=3A ;IB1=-IB2=-0.6A 4.0 For BUW11AF IC=2.5A ;IB1=-IB2=-0.5A 0.8 |I |I |I s s s Fall time 2 Inchange Semiconductor Product Specification Silicon NPN Power Transistors PACKAGE OUTLINE BUW11F BUW11AF HAN INC SEM GE UTO OND IC R Fig.2 Outline dimensions(unindicated tolerance:A 0.30mm) 3 |
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